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教員紹介

所属 現代ライフ学部 経営マネージメント学科 教授
環境情報学研究科 環境情報学専攻 教授
氏名 青木 均
最終学歴 武蔵工業大学 工学部 電子通信工学科
現在所属している学会 IEEE (U.S.A.) Senior Member、Society for Information Display (U.S.A.) Member
学士・修士・博士 博士(工学)【東京工業大学】
所有資格
研究の分野 情報学, 電気電子工学, 経営学
主な研究項目 半導体デバイスモデリング技術,集積回路シミュレーション技術,電子計測工学,マイクロ波・ミリ波解析,科学技術プログラミング,数値演算アルゴリズム開発,技術経営学-MOT(ソフトウエア,コンサルティング)
主な研究業績 【著書】シリコンFETのモデリング /アジソン・ウエスレー・パブリッシャーズ・ジャパン出版/単著/1997.04
【著書】CMOSモデリング技術-SPICE用コンパクトモデルの理論と実践 /丸善出版/共著/2006.01
パッケージトランジスタのSパラメータ測定(査読付) /信学論(C-II),vol. J73-C-II, no. 7, pp. 432-435, Jul. 1990/単著/1990.07
Dynamic Characterization of a-Si TFT-LCD Pixels(査読付) /IEEE Trans. Electron Devices, vol. 43, no. 1, pp. 31-39/単著/1996.01
Dynamic Characterization and Modeling of a-Si TFT-LCD Pixels(査読付) /Hewlett-Packard Laboratories, Technical Publications Dept. Tech Report: HPL-96-19/単著/1996.09
a-Si TFTのフリッカーノイズ測定とモデリング(査読付) /信学論(C-I, II), vol. J82-C-II, no. 5, pp. 284-285/単著/1999.05
A TFT-LCD Simulation Method using Pixel Macro Models(査読付) /IEICE Trans. Electronics, vol. E82-C, no.6, pp.1025-1030/共著/1999.06
【学位論文】A Study on Accurate and Efficient Compact Models for New Components used for Integrated Circuits(集積回路用新素子の高精度・高効率回路モデルの研究) /東京工業大学/単著/2002.01
Bias and Geometry Dependent Flicker Noise Characterization for n-MOSFET's(査読付) /IEICE Trans. Electronics, vol. E85-C, no.2, pp.408-414/単著/2002.02
Practical Design and Modeling Procedure of Test Structures for Microwave Bare-Chip Devices(査読付) /IEICE Trans. Electronics, Vol. E87-C No.1 pp.60-65/共著/2004.01
Gate-to-Bulk Overlap Capacitance Extraction and Circuit Verification(査読付) /IEICE Trans. Electronics, vol. E87-C, no.6, pp.929-932/共著/2004.06
n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor Modeling in Forward Body Bias Condition for Low Voltage Complementary Metal-Oxide-Semiconductor Circuits Design(査読付) /Journal of Japan Applied Physics, vol. 51 no. 4, (2012), pp. 234-237/共著/2012.05
Self-Heating Characterization of Multi-Finger N-MOSFETS used for RF-CMOS Applications(査読付) /Institution of Engineering and Technology, vol. 21/共著/2013.08
Analog/Mixed-Signal Circuit Design in Nano CMOS Era(査読付) /IEICE Electronics Express/共著/2014.02
A New Self-heat Modeling Approach for LDMOS Devices(査読付) /Key Engineering Materials/共著/2015.03
Gate Voltage Dependent 1/f Noise Variance Model Based on Physical Noise Generation Mechanisms in n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors(査読付) /Japanese Journal of Applied Physics, vol. 54, 04DC10 1-4/共著/2015.03
Self-Heat Characterizations and Modeling of Multi-finger n-MOSFETs for RF-CMOS Applications(査読付) /IEEE Trans. Electron Devices, vol. 62, issue 9/共著/2015.09
Bias and 1/f Noise Degradation Modeling of 90 nm n-Channel MOSFETs Induced by Hot Carrier Stress(査読付) /Key Engineering Materials/共著/2016.03
High Precision IGBT Macro-Model for Switching Simulations(査読付) /Key Engineering Materials/共著/2016.03
A Typical MOSFET Modeling Procedure for RF Analog Circuit Design(査読付) /Key Engineering Materials/共著/2016.03
【翻訳書籍】SPICEによる回路設計(Macromodeling with SPICE) /トッパン出版部/単著/1996.11
【招待講演】Model Parameter Extractions for Recent CMOS Devices(査読付) /Tutorial Short Course, IEEE 2001 Int. Conference on Microelectronic Test Structures, Kobe, Japan./単著/2001.03
【招待講演】Self-Heating Characterization of Multi-Finger MOSFETS used for RF-CMOS Applications(査読付) /13th International Conference on Solid-State and Integrated-Circuit Technology 2012, Shenzhen, China./共著/2012.12
Typical n-MOSFET Modeling using A Skewing Method(査読付) /The 4th IEICE International Conference on Integrated Circuits Design and Verification (ICDV), Saigon, Vietnum./共著/2013.12
A New Self-heat Modeling Approach for LDMOS Devices(査読付) /5th International Conference on Advanced Micro-Device Engineering, Kiryu, Gunma, Japan./共著/2013.12
Self-heat Modeling of Multi-finger n-MOSFETs for RF-CMOS Applications(査読付) /2014 IEEE Radio Frequency Integrated Circuits Symposium, Tampa Bay, Florida, U.S.A./共著/2014.06
Gate Voltage Dependent 1/f Noise Variance Model in n-Channel MOSFETs(査読付) /International Conference on Solid State Devices and Materials 2014, Tsukuba, Ibaragi, Japan./共著/2014.09
Study of High accuracy Macro model of the IGBT(査読付) /3rd Solid State Systems Symposium-VLSIs and Semiconductor Related Technologies & The 17th International Conference on Analog VLSI Circuits, Ho Chi Minh City, Vietnam /共著/2014.10
A Study on HCI Induced Gate Leakage Current Model used for Reliability Simulations in 90nm n-MOSFETs(査読付) /The 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications and 7th International Conference on Advanced Micro-Device Engineering, Kiryu, Gunma, Japan./共著/2015.11
Reliability Modeling on 90 nm n-channel MOSFETs with BSIM4 Dedicated to HCI Mechanisms(査読付) /The 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications and 7th International Conference on Advanced Micro-Device Engineering, Kiryu, Gunma, Japan./共著/2015.11
Study on ON-Resistance Degradation Modeling Used for HCI Induced Degradation Characteristic of LDMOS Transistors(査読付) /International Conference on Solid State Devices and Materials, Tsukuba, Sept. 2016/共著/2016.09
Electron Mobility and Self-Heat Modeling of AlN/GaN MIS-HEMTs with Embedded Source Field-Plate Structures(査読付) /2016 IEEE Compound Semiconductor IC Symposium, Oct. 23-26, 2016, Austin, Texas, U.S.A./共著/2016.10
Study on Electron Mobility Model for AlN/GaN MIS-HEMTs with Embedded Source Field-Plate Structures(査読付) /International Conference on Solid-State and Integrated Circuit Technology, Hangzhou, China, Oct.25-28, 2017/共著/2016.11
Electron Mobility Modeling of AlN/GaN MIS-HEMTs With Embedded Source Field-Plate Structures(査読付) / The 12th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications & The 8th International Conference on Advanced Micro-Device Engineering, Dec. 9, 2016, Kiryu/共著/2016.12
Study on Hot Carrier Injection Model of LDMOS for Reliability Simulation(査読付) /The 12th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications & The 8th International Conference on Advanced Micro-Device Engineering, Dec. 9, 2016, Kiryu/共著/2016.12
Velocity Saturation Calculations for 90 nm MOSFET Modeling in Saturation Regions(査読付) / The 12th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications & The 8th International Conference on Advanced Micro-Device Engineering, Dec. 9, 2016, Kiryu/共著/2016.12
90nm NMOSFETの速度飽和パラメータ新抽出方法 /LSIとシステムのワークショップ 2017/共著/2017.05
【招待講演】Fundamental Design Tradeoff and Performance Limitation of Electronic Circuits Based on Uncertainty Relationships(査読付) /12th International Conference on ASIC (ASICON 2017)/共著/2017.10
A Novel Approach for Velocity Saturation Calculations of 90nm N-channel MOSFET(査読付) /International Conference on Mechanical, Electrical and Medical Intelligent System 2017/共著/2017.11
(Plenary) Consideration on Fundamental Performance Limitation of Analog Electronic Circuits Based on Uncertainty Principle /International Conference on Mechanical, Electrical and Medical Intelligent System 2017/共著/2017.11
主な担当授業科目名 コンピュータ演習I、コンピュータ概論、システムデザイン基礎、情報物理学特論・特講、数理情報科学特論・特講

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